Samsung scientists are working on a new type of memory that could bring RAM like speeds and SSD capacities together

Samsung has utilized precocious machine modeling to accelerate nan improvement of Selector-Only Memory (SOM), a caller representation exertion that combines non-volatility pinch DRAM-like read/write speeds and stackability.

Building connected nan company's earlier investigation successful nan field, SOM is based connected cross-point representation architectures, akin to phase-change representation and resistive RAM (RRAM), wherever stacked arrays of electrodes are used. Typically, these architectures require a selector transistor aliases diode to reside circumstantial representation cells and forestall unintended electrical pathways.

Samsung has taken a caller attack by exploring chalcogenide-based materials that usability arsenic some nan selector and nan representation element, introducing a caller shape of non-volatile memory.

A broader search

eeNews Analog reports Samsung researchers will coming their findings astatine this year’s International Electron Devices Meeting (IEDM), taking spot from December 7 to 11, successful San Francisco. The South Korean tech elephantine will talk really it screened an extended scope of chalcogenide materials for SOM applications.

Samsung says its study explored complete 4,000 worldly combinations, narrowing them down to 18 promising candidates utilizing Ab-initio-based machine modeling (see nan sketch astatine nan apical of nan page). The attraction was connected improving period voltage drift and optimizing nan representation model - 2 cardinal factors successful SOM performance.

Traditional SOM investigation has been constricted to nan usage of Ge, As, and Se chalcogenide systems recovered successful ovonic period switches (OTS). However, Samsung says its broad modeling process allowed for a broader search, considering bonding characteristics, thermal stability, and instrumentality reliability to heighten capacity and efficiency.

In a follow-up IEDM presentation, eeNews Analog reports, IMEC researchers will talk imaginable atomic mechanisms, specified arsenic section atomic enslaved rearrangement and atomic segregation, that could explicate really nan selector constituent successful SOM operates, further influencing period voltage - an important facet successful representation performance.

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